论文

Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots

论文编号:

作者:

J. He

刊物名称:

Applied Physics Letters

所属学科:

论文题目英文:

Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots

年:

2012

卷:

100

期:

页:

171914:1-4

联系作者:

J. He

收录类别:

影响因子:

参与作者:

备注: